Biography
I obtained BSc Hons degree in Physics from University of Jaffna, Sri Lanka in 2010, and MSc by Research and PhD in Condensed Matter Physics from University of Nottingham in 2012 and 2015, respectively. Following my PhD, I worked as a postdoctoral researcher for 3 years at University of Nottingham and 18 months at University of Manchester. I was appointed as a Lecturer in Physics at Keele University in October 2019.
Research and scholarship
I am interested to study the fundamental properties and applications of novel 2D materials. My research focuses on the production, characterization and exploitation of 2D materials especially, III-VI van der Waals layered materials.
During my first postdoctoral position at University of Nottingham, I developed a physical vapour deposition technique for the growth of 2D layers of InxSey on different substrates (SiO2/Si, Mica, Graphite, Graphene, and GaSe). At Manchester, I learned device fabrication techniques and fabricated devices made of Graphene, Boron Nitride and other 2D materials and studied their physical and transport properties with a view to understand their fundamental physics.
Now at Keele, I am developing growth techniques for III-VI layered materials and their heterostructures.
Teaching
Year 1
Oscillations and Waves
Year 2
Applied Physics and Emerging Technologies
Selected Publications
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Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Advanced Functional Materials. doi>2021.
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Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, vol. 5(3), 035026. doi> full text>
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Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, vol. 4(2), 025043. doi> full text>
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Quantum confinement and photoresponsivity ofβ-In2Se3nanosheets grown by physical vapour transport. 2D Materials, vol. 3(2), 025030. doi> full text>
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Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions. ADVANCED OPTICAL MATERIALS, vol. 2(11), 1064-1069. link> doi> full text>2014.
Full Publications List show
Journal Articles
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Anomalous Low Thermal Conductivity of Atomically Thin InSe Probed by Scanning Thermal Microscopy. Advanced Functional Materials. doi>2021.
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Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction. Communications Materials, vol. 1(1), Article 19. doi> link> full text>2020.
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Production and processing of graphene and related materials. 2D Materials, vol. 7(2), 022001. doi> link> full text>2020.
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Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, vol. 5(3), 035026. doi> full text>
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Optical Detection and Spatial Modulation of Mid-Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor. Advanced Optical Materials, vol. 6(3), 1700492. doi> full text>2018.
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Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation. 2D Materials, vol. 4(2), 025043. doi> full text>
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Quantum confinement and photoresponsivity ofβ-In2Se3nanosheets grown by physical vapour transport. 2D Materials, vol. 3(2), 025030. doi> full text>
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Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN. APPLIED PHYSICS LETTERS, vol. 106(5), Article ARTN 051905. link> doi> full text>2015.
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Room Temperature Electroluminescence from Mechanically Formed van der Waals III-VI Homojunctions and Heterojunctions. ADVANCED OPTICAL MATERIALS, vol. 2(11), 1064-1069. link> doi> full text>2014.
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Tunable spectral response by hydrogen irradiation of Ga(AsN) superlattice diodes. APPLIED PHYSICS LETTERS, vol. 104(24), Article ARTN 242110. link> doi> full text>2014.
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A micrometer-size movable light emitting area in a resonant tunneling light emitting diode. APPLIED PHYSICS LETTERS, vol. 103(24), Article ARTN 241105. link> doi> full text>2013.
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Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. PHYSICAL REVIEW B, vol. 86(15), Article ARTN 155307. link> doi> full text>2012.
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Laser writing of the electronic activity of N- and H-atoms in GaAs. APPLIED PHYSICS LETTERS, vol. 99(2), Article ARTN 021105. link> doi> full text>2011.
Other
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Formative Assessment Encourages Active Learning by Challenging Students. IOP Conferences. IOP. link> link> full text>
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Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. woi.chemie.uni-leipzig.de. doi> link> full text>
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From the growth to the exploitation of two-dimensional InxSey. www.graphene-flagship.eu. full text>
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NOVEL APPROACHES TO THE FABRICATION OF NANOSCALE DEVICES.
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Laser Writing of the Electronic Activity of Nitrogen and Hydrogen Atoms in Gallium Arsenide. full text>
